Thermoelectric properties of n-type Mg2Si0.6-ySbySn0.4 compounds

The thermoelectric properties of n-type Mg2Si0.6-ySbySn0.4 solid solutions with a small Sb-doping ratio on the Si-site (y = 0.0-0.015) were prepared by an induction melting/hot-pressing method. The electrical conductivity, Seebeck coefficient and thermal conductivity have been measured as a function of temperature from 300 K to 820 K. A power factor similar to 2.28 x 10(-3) Wm(-1)K(-2) at 574 K for y = 0.01, and a dimensionless figure of merit ZT similar to 0.68 at 724 K for y = 0.005 are attained. Given the potential of these materials for utilization in thermoelectric devices in a medium temperature range, the thermoelectric compatibility of Mg2Si0.6-ySbySn0.4 samples has been also addressed.