Voltage stress-induced hot carrier effects on SiGe HBT VCO

被引：2
|
作者：
Yu, CZ [1 ]
Xiao, EJ
Yuan, JS
机构：
[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32826 USA
[2] Univ Texas, Dept Elect & Comp Engn, Arlington, TX 76019 USA
来源：
MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2005.07.026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1402 / 1405
页数：4
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