Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

被引：4

作者：

Chang, Y. C. ^{[1
]}

Robson, A. J. ^{[1
]}

Harrison, S. ^{[1
]}

Zhuang, Q. D. ^{[1
]}

Hayne, M. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

AIP ADVANCES | 2015年 / 5卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS; 2-DIMENSIONAL ELECTRONS; DROPLET EPITAXY; RELAXATION; MAGNETOOPTICS; LUMINESCENCE; TEMPERATURE; SUBSTRATE; STATES;

D O I：

10.1063/1.4922950

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect. (C) 2015 Author(s).

引用

页数：6

共 50 条

[1] Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1-xAs quantum wells
Murdin, BN
Heiss, W
Langerak, CJGM
Lee, SC
Galbraith, I
Strasser, G
Gornik, E
Helm, M
Pidgeon, CR
[J]. PHYSICAL REVIEW B, 1997, 55 (08) : 5171 - 5176
[2] Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1-xAs quantum wells
[J]. Phys Rev B, 8 (5171):
[3] Energy spectra of GaAs/AlxGa1-xAs quantum dots
El-Said, Mohammad
Abu Saa, M.
[J]. Turkish Journal of Physics, 1998, 22 (09): : 885 - 894
[4] Photoinduced phonon fluorescence in GaAs/AlxGa1-xAs quantum wells
Santos, WP
Fonseca, ALA
Agrello, DA
Nunes, OAC
[J]. SOLID STATE COMMUNICATIONS, 1998, 108 (10) : 743 - 748
[5] Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots
Wang Chuan-Dao
[J]. ACTA PHYSICA SINICA, 2008, 57 (02) : 1091 - 1096
[6] Interface phonons in cylindrical GaAs/AlxGa1-xAs quantum dots
Chen, CY
Li, WS
Yeung, HK
[J]. SOLID STATE COMMUNICATIONS, 1998, 106 (06) : 341 - 345
[7] Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[J]. Wuli Xuebao, 2008, 2 (1091-1096):
[8] Interface phonons in cylindrical GaAs/AlxGa1-xAs quantum dots
Guangzhou Normal Univ, Guangzhou, China
[J]. Solid State Commun, 6 (341-345):
[9] PHONON BROADENING OF EXCITONS IN GAAS/ALXGA1-XAS QUANTUM-WELLS
GAMMON, D
RUDIN, S
REINECKE, TL
KATZER, DS
KYONO, CS
[J]. PHYSICAL REVIEW B, 1995, 51 (23): : 16785 - 16789
[10] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier
Kim, DS
Ko, HS
Kim, YM
Rhee, SJ
Hong, SC
Yee, DS
Woo, JC
Choi, HJ
Ihm, J
[J]. 17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730

← 1 2 3 4 5 →