RF-MBE growth of InN dots on N-polar GaN grown on vicinal c-plane sapphire

被引：0

作者：

Hashimoto, N ^{[1
]}

Kikukawa, N ^{[1
]}

Che, SB ^{[1
]}

Ishitani, Y ^{[1
]}

Yoshikawa, A ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

来源：

GAN, AIN, INN AND THEIR ALLOYS | 2005年 / 831卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500 C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

引用

页码：285 / 290

页数：6

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