Debye Temperature of II-VI and III-V Semiconductors

被引：0

作者：

Kumar, V. ^{[1
]}

Jha, Vijeta ^{[1
]}

Shrivastava, A. K. ^{[1
]}

机构：

[1] Indian Sch Mines Univ, Dept Elect & Instrumentat, Dhanbad 826004, Bihar, India

来源：

2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年

关键词：

Binary tetrahedral semiconductors; Debye temperature; II-VI and III-V semiconductors; COMPOUND SEMICONDUCTORS; ELASTIC-CONSTANTS; MELTING-POINT; A(I)B(III)C(2)(VI); MICROHARDNESS; HEAT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Debye temperature (circle minus(D)) of II-VI and III-V zincblende semiconductors has been calculated using plasma frequency formalism recently developed for ternary chalcopyrite semiconductors. Four simple relations have been proposed to calculate the values of circle minus(D). Two are based on plasmon energy ((h) over bar omega(p)) data and one each on molecular weight (W) and melting temperature (T-m).The calculated values of circle minus(D) are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.

引用

页码：183 / 186

页数：4

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