Porous ZnO nanonetworks grown by molecular beam epitaxy

被引:3
|
作者
Lee, W. C. T. [1 ]
Kendrick, C. E. [1 ]
Millane, R. P. [1 ]
Liu, Z. [2 ]
Ringer, S. P. [2 ]
Washburn, K. [3 ]
Callaghan, P. T. [3 ]
Durbin, S. M. [4 ,5 ]
机构
[1] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 1, New Zealand
[2] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
[3] Victoria Univ Wellington, Sch Chem & Phys Sci, Wellington, New Zealand
[4] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[5] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
关键词
FILMS; GAN; RELAXATION; NANOWIRES; DEFECTS;
D O I
10.1088/0022-3727/45/13/135301
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plasma-assisted molecular beam epitaxy was employed to create porous nanonetworks of ZnO directly on GaN epilayers without the use of catalysts or templates. Detailed analysis of scanning electron microscopy (SEM) images of both as-grown and etched samples reveals that the typical porous nanonetwork structure is multilayered, and suggests that dislocations originating at the GaN/sapphire heterointerface and/or defects characterizing an unusually rough GaN surface are responsible. The pore size distribution of the nanonetwork was measured using nuclear magnetic resonance (NMR) cryoporometry. A bimodal pore size distribution centred at 4 nm and 70 nm, respectively, was observed, consistent with the existence of small nanoscale pores in the bulk of the sample, and large open pores on the surface of the porous nanonetwork as observed by SEM.
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页数:6
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