Power Amplifier MMICs for 15 GHz Microwave Links in 0.25 μm GaN Technology

被引：0
|
作者：
Camarchia, Vittorio [1 ]
Quaglia, Roberto [2 ]
Ramella, Chiara [1 ]
Pirola, Marco [1 ]
机构：
[1] Politecn Torino, Dept Elect & Telecommun, Turin, Italy
[2] Cardiff Univ, Ctr High Frequency Engn, Cardiff, S Glam, Wales
来源：
PROCEEDINGS OF 2017 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC 2017) | 2017年
基金：
欧盟地平线“2020”;
关键词：
Gallium nitride; Ku-band; power amplifiers; microwave links; BAND;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 mu m technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 mu m technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] A 2-6 GHz Power Amplifier with 45 % PAE in 0.25μm GaN Technology
    Mao, Shuman
    Liu, Xiansuo
    Guo, Yunchuan
    Wu, Yunqiu
    Xu, Yuehang
    [J]. PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 1298 - 1300
  • [2] Concurrent Dual Band Hybrid Power Amplifier in 0.25μm GaN Technology
    Nath, Urmila
    Quach, Tony
    Mattamana, Aji
    Dooley, Steve
    Gouty, William
    Watson, Paul
    Subramanyam, Guru
    [J]. PROCEEDINGS OF THE 2017 TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS (WMCS), 2017,
  • [3] Design of Power Amplifier MMICs Based on GaN HEMTs at 110GHz
    Hou Yanfei
    Yu Weihua
    Luo Xiaobin
    Lv Yuanjie
    Dun Shaobo
    Feng Zhihong
    [J]. 2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, 2015,
  • [4] 50 Watt S-band Power Amplifier in 0.25 μm GaN Technology
    van der Bent, Gijs
    de Hek, Peter
    van der Graaf, Marcel
    van Vliet, Frank E.
    [J]. 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), 2014, : 333 - 336
  • [5] 50 Watt S-band Power Amplifier in 0.25 μm GaN Technology
    van der Bent, Gijs
    de Hek, Peter
    van der Graaf, Marcel
    van Vliet, Frank E.
    [J]. 2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1277 - 1280
  • [6] Design and Performance of 16-40GHz GaN Distributed Power Amplifier MMICs Utilizing an Advanced 0.15μm GaN Process
    Campbell, Charles F.
    Nayak, Sabyasachi
    Kao, Ming-Yih
    Chen, Shuoqi
    [J]. 2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [7] A 1.8 to 2.4 GHz Stacked Power Amplifier Implemented in 0.25μm CMOS SOS Technology
    Helmi, Sultan R.
    Shan, Hengying
    Mohammadi, Saeed
    [J]. 2015 IEEE 15TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2015, : 52 - 54
  • [8] Metamorphic 94 GHz power amplifier MMICs
    Tessmann, A
    Leuther, A
    Schwoerer, C
    Massler, H
    [J]. 2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 1579 - 1582
  • [9] Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology
    John, Laurenz
    Tessmann, Axel
    Leuther, Arnulf
    Neininger, Philipp
    Merkle, Thomas
    Zwick, Thomas
    [J]. IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2020, 10 (03) : 309 - 320
  • [10] 2-18GHz Reconfigurable Distributed Power Amplifier Using 0.25um GaN Technology
    Hu, Xiaojing
    Liu, Zhuohao
    Pu, Ziqi
    Chis, Pei-Ling
    Zhang, Xilin
    Zhu, Xu
    Li, Xiang
    Wang, Yong
    Yang, Tao
    [J]. 2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2022, : 716 - 718
12345