Metamorphic 94 GHz power amplifier MMICs

被引：19

作者：

Tessmann, A ^{[1
]}

Leuther, A ^{[1
]}

Schwoerer, C ^{[1
]}

Massler, H ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

metamorphic high electron mobility transistor (MHEMT); W-band; coplanar waveguide; power amplifiers;

D O I：

10.1109/MWSYM.2005.1517002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the development of two 94 GHz power amplifier MMICs for use in high-resolution synthetic aperture radar (SAR) systems. The amplifier circuits have been realized using a 0.1 mu m InAIAs/InGaAs based depletion type metamorphic high electron mobility transistor (MHEMT) technology, in combination with coplanar circuit topology and dual-gate transistors, thus leading to an excellent power and gain performance at millimeter-wave frequencies. The realized two-stage driver amplifier (MPA) MMIC exhibited a small-signal gain of 16 dB and a saturated output power of 20.5 dBm at 94 GHz with a total gate width of 0.72 mm in the output stage. The two-stage high power amplifier (HPA) circuit achieved a linear gain of 10 dB and a saturated output power of 23.3 dBm with a total output periphery of 1.44 mm.

引用

页码：1579 / 1582

页数：4

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