High Gain 220GHz Power Amplifier MMICs with Minimal Footprint

被引：0
|
作者：
Cheron, Jerome [1 ]
Grossman, Erich [1 ]
机构：
[1] NIST, Gaithersburg, MD 20899 USA
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年
关键词：
InP HBT; millimeter-wave; monolithic microwave integrated circuit; power amplifiers; waveguide to microstrip transition;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two power amplifier MMICs, designed for minimal footprint, and a low insertion loss microstrip to waveguide transition are presented at 220GHz. The two-stage power amplifier ((260x1120) mu m(2)) exhibits 13.5mW of output power and 13.3dB of gain at 207GHz. The four-stage power amplifier, designed in a (260x2085) mu m(2) area, provides an output power higher than 15mW associated with 19.8dB of gain up to 220.5GHz, with a peak output power of 28mW measured at 211.5GHz. The microstrip to waveguide transition was designed to fit within a width of 280 mu m, in order to limit the excitation of unwanted substrate modes. These three devices were designed for integration on a single, rectangular chip transmitter.
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页数：3
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