Highly Efficient Ge-Rich Ge x Pb1-x Te Thermoelectric Alloys

被引：67
|
作者：
Gelbstein, Yaniv [1 ]
Dado, Boaz [1 ]
Ben-Yehuda, Ohad [1 ]
Sadia, Yatir [1 ]
Dashevsky, Zinovy [1 ]
Dariel, Moshe P. [1 ]
机构：
[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 09期
关键词：
Thermoelectrics; PbTe; GeTe; SPS;
D O I：
10.1007/s11664-009-1012-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The search for alternative energy sources is presently at the forefront of applied research. In this context, thermoelectricity for direct energy conversion from thermal to electrical energy plays an important role. This paper is concerned with the development of highly efficient p-type Ge (x) Pb1-x Te alloys for thermoelectric applications, using spark plasma sintering. The carrier concentration of GeTe was varied by alloying of PbTe and/or by Bi2Te3 doping. Very high ZT values up to similar to 1.8 at 500A degrees C were obtained by doping Pb0.13Ge0.87Te with 3 mol% Bi2Te3.
引用
收藏
页码：2049 / 2052
页数：4
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