Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs

被引：1

作者：

Wang, Sheng-Chun ^{[1
,2
,3
]}

Su, Pin ^{[2
,3
]}

Chen, Kun-Ming ^{[1
]}

Chen, Bo-Yuan ^{[1
]}

Huang, Guo-Wei ^{[1
,2
,3
]}

Hung, Cheng-Chou ^{[4
]}

Huang, Sheng-Yi ^{[4
]}

Fan, Cheng-Wen ^{[4
]}

Tzeng, Chih-Yuh ^{[4
]}

Chou, Sam ^{[4
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[4] United Microelect Corp, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 03期

关键词：

Metal-oxide-semiconductor field-effect transistors (MOSFETs); noise; radio frequency (RF); temperature; tensile strained; van der Ziel model; CHANNEL NOISE; MOSFETS;

D O I：

10.1109/TED.2010.2104153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NFmin and R-n) than the control device.

引用

页码：895 / 900

页数：6

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