Analysis of random telegraph noise observed in semiconducting carbon nanotube quantum dots

被引：3
|
作者：
Jhang, Sung Ho [1 ]
机构：
[1] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
来源：
SYNTHETIC METALS | 2014年 / 198卷
关键词：
Carbon nanotube; Random telegraph noise; Quantum dot; Charge trap; TRANSISTORS; SIGNAL;
D O I：
10.1016/j.synthmet.2014.09.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated random telegraph noise (RTN) observed in individual semiconducting carbon nanotubes (CNTs) in Coulomb-blockade regime. RTN characteristics are studied as a function of gate-voltage and drain-source voltage. Our results are explained by the capture and emission of carriers by charge traps in the vicinity of CNTs. Because of the large RTN amplitude, often greater than 50% of the total current, RTN measurements can be developed into an effective tool to estimate the trap energy and the location of the trap in CNT quantum dot devices. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：118 / 121
页数：4
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