A novel piezoresistive microprobe for atomic and lateral force microscopy

被引:8
|
作者
Gotszalk, T
Grabiec, PB
Rangelow, IW
机构
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[3] Univ Kassel, Inst Microstruct Technol & Analyt, D-34109 Kassel, Germany
关键词
scanning probe microscopy; atomic force microscopy; lateral force microscopy; piezoresistive sensor;
D O I
10.1016/j.sna.2005.04.034
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we present the development of a novel probe for atomic force and lateral force microscopy, based on detailed finite elements method (FEM) simulation. The FEM simulation is performed by means of the ANSYS 5.3 code. The developed probe consists of a micromachined silicon cantilever beam with an integrated micro-tip and piezoresistive sensors for detecting the lateral and vertical forces acting on the tip. The sensitivity for vertical displacement detection of 1.26 mu V/nm (for 1 k Omega piezoresistor) and for lateral displacement detection of 0.46 mu V/nm (for 0.7 k Omega resistors), by 0.6 V applied supply voltage was obtained. The principle of the probe, theoretical analysis, and experimental investigation of the probe sensor are discussed. The probe is suitable for operating in contact and noncontact atomic force microscopy (AFM) mode. The probe was utilized for imaging the surface of a chromium/quartz structure. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:370 / 378
页数:9
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