The Influence of CuCl Treatment on the PL Spectra of CdTe Thin Film, Component of CdS/CdTe Heterojunctions

被引：0
|
作者：
Vatavu, Sergiu A. [1 ]
Zhao, Hehong [2 ]
Caraman, Iuliana M. [3 ]
Gasin, Petru A. [1 ]
Morel, Don L. [2 ]
Ferekides, Chris S. [2 ]
机构：
[1] Moldova State Univ, Fac Phys, 60 A Mateevici Str, MD-2009 Kishinev, Moldova
[2] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
[3] Univ Bacau, Dept Engn, Bacau RO-600115, Romania
来源：
THIN-FILM COMPOUND SEMICONDUCTOR VOLTAICS-2009 | 2010年 / 1165卷
关键词：
PHOTOLUMINESCENCE; EFFICIENCY; CADMIUM;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Technology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of the CuCl influence, as-deposited and annealed heterojunctions, with CuCl treatment of CdS have been investigated.
引用
收藏
页码：307 / +
页数：3
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