Far-field narrowing in spatially modulated broadarea edge-emitting semiconductor amplifiers

被引：9
|
作者：
Radziunas, Mindaugas [1 ]
Herrero, Ramon [2 ]
Botey, Muriel [3 ]
Staliunas, Kestutis [2 ,4 ]
机构：
[1] Leibniz Inst Forschung Verbund Berlin eV, Weierstrass Inst Appl Anal & Stochast, D-10117 Berlin, Germany
[2] Univ Politecn Cataluna, Dept Fis & Engn Nucl, Terrassa 08222, Spain
[3] Univ Politecn Cataluna, Dept Fis & Engn Nucl, Barcelona 08036, Spain
[4] Inst Catalana Recerca & Estudis Avancats, Barcelona 08010, Spain
来源：
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2015年 / 32卷 / 05期
关键词：
SPATIOTEMPORAL DYNAMICS; BEAM-PROPAGATION; POWER-AMPLIFIERS; LASERS; SIMULATION; FEEDBACK; NM;
D O I：
10.1364/JOSAB.32.000993
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component. (C) 2015 Optical Society of America
引用
收藏
页码：993 / 1000
页数：8
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