Far-field narrowing in spatially modulated broadarea edge-emitting semiconductor amplifiers

被引：9

作者：

Radziunas, Mindaugas ^{[1
]}

Herrero, Ramon ^{[2
]}

Botey, Muriel ^{[3
]}

Staliunas, Kestutis ^{[2
,4
]}

机构：

[1] Leibniz Inst Forschung Verbund Berlin eV, Weierstrass Inst Appl Anal & Stochast, D-10117 Berlin, Germany

[2] Univ Politecn Cataluna, Dept Fis & Engn Nucl, Terrassa 08222, Spain

[3] Univ Politecn Cataluna, Dept Fis & Engn Nucl, Barcelona 08036, Spain

[4] Inst Catalana Recerca & Estudis Avancats, Barcelona 08010, Spain

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2015年 / 32卷 / 05期

关键词：

SPATIOTEMPORAL DYNAMICS; BEAM-PROPAGATION; POWER-AMPLIFIERS; LASERS; SIMULATION; FEEDBACK; NM;

D O I：

10.1364/JOSAB.32.000993

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component. (C) 2015 Optical Society of America

引用

页码：993 / 1000

页数：8

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