Full-wave analysis of shielded planar circuits using different models of sources

被引:0
|
作者
Grayaa, K [1 ]
Hamdi, N [1 ]
Aguili, T [1 ]
Bouallegue, A [1 ]
机构
[1] Ecole Natl Ingn Tunis, Lab SYSCOM, Dept Genie Elect, Tunis, Tunisia
关键词
D O I
10.1049/ip-map:20030457
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A source method is developed for analysing N-port planar microwave circuits. It is proposed to model the circuit by a rigorous method including different definitions of sources. Two models of excitation terms are proposed: the source placed on the circuit plane (located source) and a vertical source (extended source). The advantages and limits of the method according to each definition are presented. Supportive numerical results for the characterisation of planar discontinuities are provided.
引用
收藏
页码:258 / 264
页数:7
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