Optical properties of InAs quantum dots in a Si matrix

被引：65

作者：

Heitz, R ^{[1
]}

Ledentsov, NN

Bimberg, D

Egorov, AY

Maximov, MV

Ustinov, VM

Zhukov, AE

Alferov, ZI

Cirlin, GE

Soshnikov, IP

Zakharov, ND

Werner, P

Gösele, U

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.123660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix. At a growth temperature of 400 degrees C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2-4 nm range. A luminescence band in the 1.3 mu m region found exclusively for samples with such InAs QDs exhibits a pronounced excitation density dependence of the peak position and a decay time of 440 ns. The optical properties suggest an indirect type II transition for InAs/Si QDs. The electronic structure of InAs/Si QDs is discussed in view of available band offset information. (C) 1999 American Institute of Physics. [S0003-6951(99)00512-4].

引用

页码：1701 / 1703

页数：3

共 50 条

[31] Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
Maximov, MV
Tsatsul'nikov, AF
Volovik, BV
Bedarev, DA
Egorov, AY
Zhukov, AE
Kovsh, AR
Bert, NA
Ustinov, VM
Kop'ev, PS
Alferov, ZI
Ledentsov, NN
Bimberg, D
Soshnikov, IP
Werner, P
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (16) : 2347 - 2349
[32] Effect of B Atoms on the Properties of InAs Quantum Dots in the GaAs Matrix
Danil'tsev, V. M.
Vostokov, N. V.
Drozdov, Yu. N.
Drozdov, M. N.
Murel, A. V.
Pryakhin, D. A.
Khrykin, O. I.
Shashkin, V. I.
[J]. JOURNAL OF SURFACE INVESTIGATION, 2008, 2 (04): : 514 - 517
[33] Optical Anisotropy of InAs Quantum Dots
Blokhin, S. A.
Nadtochiy, A. M.
Krasivichev, A. A.
Karachinsky, L. Ya
Vasil'ev, A. P.
Maximov, M. V.
Zhukov, A. E.
Ledentsov, N. N.
Ustinov, V. M.
[J]. TECHNICAL PHYSICS LETTERS, 2010, 36 (12) : 1079 - 1081
[34] Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
Kim, G. S.
Jeon, S. M.
Cho, M. Y.
Choi, H. Y.
Kim, D. Y.
Kim, M. S.
Kwon, Y. S.
Choe, J. W.
Kim, J. S.
Kim, J. S.
Leem, J. Y.
[J]. ACTA PHYSICA POLONICA A, 2010, 118 (04) : 673 - 676
[35] Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix
V. M. Danil’tsev
N. V. Vostokov
Yu. N. Drozdov
M. N. Drozdov
A. V. Murel’
D. A. Pryakhin
O. I. Khrykin
V. I. Shashkin
[J]. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2008, 2 : 514 - 517
[36] Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers
Kawaguchi, Kenichi
Yasuoka, Nami
Ekawa, Mitsuru
Ebe, Hiroji
Akiyama, Tomoyuki
Sugawara, Mitsuru
Arakawa, Yasuhiko
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (12)
[37] Influence of GaAsSb structural properties on the optical properties of InAs/GaAsSb quantum dots
Zhang, Zewen
Huang, Yidan
Reece, Peter J.
Bremner, Stephen P.
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2017, 94 : 7 - 14
[38] Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires
Yan, Xin
Zhang, Xia
Li, Junshuai
Cui, Jiangong
Ren, Xiaomin
[J]. JOURNAL OF APPLIED PHYSICS, 2015, 117 (05)
[39] Structure of InAs quantum dots in Si matrix investigated by high resolution electron microscopy
Zakharov, ND
Werner, P
Ustinov, VM
Kovsh, AR
Cirlin, GE
Smolski, OV
Denisov, DV
Alferov, ZI
Ledentsov, NN
Heitz, R
Bimberg, D
[J]. SEMICONDUCTOR QUANTUM DOTS, 2000, 571 : 299 - 303
[40] Optical properties of InAs/AlAs self-assembled quantum dots
Sarkar, D.
Calleja, J. M.
van der Meulen, H. P.
Becker, J. M.
Haug, R. J.
Pierz, K.
[J]. RESEARCH TRENDS IN CONTEMPORARY MATERIALS SCIENCE, 2007, 555 : 9 - +

← 1 2 3 4 5 →