Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 μm wavelength

被引：26
|
作者：
Mangeney, Juliette [1 ]
Crozat, Paul [1 ]
机构：
[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
来源：
COMPTES RENDUS PHYSIQUE | 2008年 / 9卷 / 02期
关键词：
terahertz; photoconductive antenna; femtosecond optical pulse; telecommunication wavelength; ionic irradiation;
D O I：
10.1016/j.crhy.2007.07.008
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
We present a detailed study of the photoconductive antennas made from heavy-ion-irradiated In0.53Ga0.47As material. The optical and transport properties of ion-irradiated In0.53Ga0.47As material are characterized. The terahertz waveforms emitted and detected by ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1.55 mu m wavelength femtosecond laser pulses are reported and the effect of the carrier lifetime on the terahertz signal characteristics emitted by such devices is analysed. The performances of ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1.55 mu m and also by 0.8 mu m wavelength fermosecond laser pulses are compared to those of similar low-temperature-grown GaAs photoconductive antennas.
引用
收藏
页码：142 / 152
页数：11
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