Lon-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 μm for time domain terahertz spectroscopy

被引：0
|
作者：
Mangeney, J. [1 ]
Chimot, N. [1 ]
Meignien, L. [1 ]
Zerounian, N. [1 ]
Crozat, P. [1 ]
Blary, K. [2 ]
Lampin, J. F. [2 ]
Mounaix, P. [3 ]
机构：
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Inst Elect Microelect & Nanotechnol, CNRS UMR 8, F-59652 Villeneuve Dascq, France
[3] Univ Bordeaux 1, Ctr Phys Mol Opt & Hertzienne, CNRS UMR 5798, F-33405 Talence, France
来源：
2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年
关键词：
terahertz; photoconductive materials; telecommunication systems; ultrafast semiconductor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a time-domain terahertz spectroscopy set up based on Er:fiber laser which delivers pulses at 1.55 mu m wavelength and that integrates photoconductive antennas made on heavy ion-irradiated In0.53Ga0.47As material as emitter and detector. A detailed study of the effect of the, carrier lifetime on the terahertz signal characteristics has been performed. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The average power radiated is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.
引用
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页码：653 / +
页数：2
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