Hybrid PKI Empirical-Neural Bias Dependent Noise Model of Microwave Transistors

被引：0
|
作者：
Marinkovic, Zlatica [1 ]
Rancic, Olivera Pronic [1 ]
Markovic, Vera [1 ]
机构：
[1] Fac Elect Engn, Nish 18000, Serbia
来源：
TELSIKS 2009, VOLS 1 AND 2 | 2009年
关键词：
Prior knowledge input artificial neural network; Microwave transistor; Noise model; Bias dependence; GAAS-MESFETS; FREQUENCY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a novel type of bias-dependent hybrid empirical-neural noise model of microwave transistors is proposed. It consists of an empirical noise model based on equivalent circuit representation and a PKI artificial neural network that produces values of the four noise parameters for an arbitrary bias point and frequency on the basis of the noise parameter values obtained by the empirical noise model. As it is shown by the numerical example of pHEMT device, this model provides results that agree well with the device measured characteristics.
引用
收藏
页码：44 / 47
页数：4
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