Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices

被引：37

作者：

Lee, Jung-Kyu ^{[1
]}

Jeong, Hu Young ^{[2
]}

Cho, In-Tak ^{[1
]}

Lee, Jeong Yong ^{[2
]}

Choi, Sung-Yool ^{[3
]}

Kwon, Hyuck-In ^{[4
]}

Lee, Jong-Ho ^{[5
,6
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Elect & Telecommun Res Inst, Taejon 305700, South Korea

[4] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

[5] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[6] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期

关键词：

Bipolar switching; low-frequency noise (LFN); random telegraph noise (RTN); resistance random access memories (RRAMs); RANDOM TELEGRAPH NOISE; 1/F; FILMS;

D O I：

10.1109/LED.2010.2046010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise (S-i/I-2) in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S-i/I-2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices.

引用

页码：603 / 605

页数：3

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