Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures

In this study, two approaches using various insertion structures are proposed for the near-UV LEDs. One is through a single MOCVD process where a heavily Mg-doped GaN insertion layer (HD-IL) technique is employed to improve crystalline quality of the GaN layer and followed by rest of required GaN-based LED structure. Another approach was demonstrated by the near-UV LEDs with an embedded distributed SiO2-disk structure. The periodically spaced hexagonal disk-shaped SiO2 mask array was deposited on the GaN/sapphire template and followed by the MOCVD re-growth process. These improvements contribute the high-performance 380-nm LEDs with enhanced output powers by 20-40% in magnitude.