Computer simulation on low energy ion implantation based on molecular dynamics methods

被引：0

作者：

Ran, YJ ^{[1
]}

Gao, WY ^{[1
]}

Huang, R ^{[1
]}

Yu, M ^{[1
]}

Zhang, X ^{[1
]}

Wang, YY ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2000年 / 9卷 / 04期

关键词：

ion implantation; molecular dynamics; recoil interaction approximation; rare-event algorithm;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low energy ion implantation, In our code, the newest physical models are included and a great number of efficient algorithms are used to conduct realistic and accurate simulations. By comparing our simulation results with the SIMS data for B, As and P ranging from 10 keV to 70 keV implantation, we verified the correctness and efficiency of our code.

引用

下载

页码：359 / 363

页数：5

共 50 条

[21] Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing
Fu, Xiu
Xu, Zongwei
He, Zhongdu
Hartmaier, Alexander
Fang, Fengzhou
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 450 : 51 - 55
[22] A new damage model for ion implantation simulation with molecular dynamics method
Wang, R
Yu, M
Zhan, K
Shi, XK
Ji, HH
Zhang, JY
Oka, H
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 1061 - 1063
[23] Molecular dynamics simulation of helium ion implantation into silicon and its migration
Liu, Lei
Xu, Zongwei
Li, Rongrong
Zhu, Rui
Xu, Jun
Zhao, Junlei
Wang, Chao
Nordlund, Kai
Fu, Xiu
Fang, Fengzhou
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 456 : 53 - 59
[24] A study on silicon damages and ultra-low energy ion implantation using classical molecular dynamics
Kang, JW
Son, MS
Kang, ES
Hwang, HJ
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 : S229 - S234
[25] DYNAMIC COMPUTER-SIMULATION OF HIGH-ENERGY ION-IMPLANTATION
MOLLER, W
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3): : 21 - 25
[26] Computer simulation of ion implantation with visual observation of the implantation profiles
Djurabekova, FG
Pugacheva, TS
Umarov, FF
Yugay, SV
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 228 - 231
[27] REACE: A new algorithm for low energy ion implantation simulation.
Shi, XK
Yu, M
Shi, H
Huang, R
Zhang, X
Wang, YY
Zhang, JY
RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS, 2004, 792 : 503 - 508
[28] Monte Carlo simulation of ultra-low-energy ion implantation
Ban, Y
Kwon, O
Won, T
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (01) : 93 - 99
[29] Computer simulation of plasma immersion ion implantation
Chen, SM
Gwilliam, RM
Sealy, BJ
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1997, 141 (1-4): : 149 - 159
[30] Sputtering of Fe(100) due to low-energy ion bombardments: Molecular dynamics simulation
Kim, Dong-Ho
Kim, Do Hyun
SCRIPTA MATERIALIA, 2006, 55 (11) : 1043 - 1046

← 1 2 3 4 5 →