High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors

被引：0

作者：

Monier, C ^{[1
]}

Sawdai, D ^{[1
]}

Cavus, A ^{[1
]}

Sandhu, R ^{[1
]}

Lange, M ^{[1
]}

Wang, J ^{[1
]}

Yamamoto, J ^{[1
]}

Hsing, R ^{[1
]}

Hayashi, S ^{[1
]}

Noori, A ^{[1
]}

Block, T ^{[1
]}

Goorsky, MS ^{[1
]}

Gutierrez-Aitken, A ^{[1
]}

机构：

[1] Northrop Grumman Space Technol, Redondo Beach, CA USA

来源：

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InxAl1-xAs/InxGa1-xAs heterojunction bipolar transistors (HBTs) with indium. composition ranging from 86 to 100% were grown on InP substrates using strain-relief compositionally graded InxAl1-xAs buffers. Lattice-matched In0.86Al0.14As/In0.86Ga0.14As, single and double HBTs with large and small emitter active areas have been successfully fabricated on 6.00 Angstrom graded buffer layers. Despite the use of narrow band gap material system, practical breakdown voltages exceeding 1.5 V have been demonstrated from DHBT structures with high DC gain, reduced leakage at the device junctions and turn-on voltage reduction by a factor of two compared to existing InP bipolar technology.

引用

页码：32 / 35

页数：4

共 50 条

[1] High speed, low leakage current InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors
Kim, YM
Urteaga, M
Rodwell, MJW
Gossard, AC
[J]. ELECTRONICS LETTERS, 2002, 38 (21) : 1288 - 1289
[2] HIGH-FREQUENCY GAAS/AL0.25GA0.75AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH TRANSPARENT INDIUM-TIN-OXIDE EMITTER CONTACTS
LI, WQ
KARAKUCUK, M
KULMAN, J
EAST, JR
HADDAD, GI
BHATTACHARYA, PK
[J]. ELECTRONICS LETTERS, 1993, 29 (25) : 2223 - 2225
[3] DIELECTRIC RESONATOR OSCILLATORS USING GAAS (GA, AL) AS HETEROJUNCTION BIPOLAR-TRANSISTORS
AGARWAL, KK
[J]. MICROWAVE JOURNAL, 1986, 29 (05) : 66 - 66
[4] (AL,IN)AS/(GA,IN)AS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
MALIK, RJ
HAYES, JR
CAPASSO, F
ALAVI, K
CHO, AY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1567 - 1567
[5] Indium Phosphide Heterojunction Bipolar Transistors as Magnetic Field Sensors
Oxland, Richard K.
Paterson, Gary W.
Long, Andrew R.
Rahman, Faiz
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) : 1534 - 1540
[6] INDIUM PHOSPHIDE-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
PELOUARD, JL
LITTLEJOHN, MA
[J]. FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 582 - 601
[7] High voltage heterojunction bipolar transistors
Hussain, T
Sokolich, M
Montes, M
Brand, M
[J]. COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII), 2000, 2000 (01): : 120 - 127
[8] Effect of indium content in the channel on the electrical performance of metamorphic high electron mobility transistors
Idham, Norman Fadhil M.
Ismat, Ahmad A. I.
Rasidah, S.
Asban, D.
Mohamed Razman, Y.
Abdul Fatah, A. M.
[J]. 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 743 - +
[9] Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors
Halder, S
Xiong, YZ
Ng, GI
Wang, H
Zheng, HQ
Radhakrishnan, K
Hwang, JCM
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (12) : 2408 - 2412
[10] Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates
Lubyshev, D.
Fastenau, J. M.
Wu, Y.
Liu, W. K.
Bulsara, M. T.
Fitzgerald, E. A.
Hoke, W. E.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 1115 - 1119

← 1 2 3 4 5 →