Study on Barium Strontium Titanate thin films integrated on Si substrates by laser Molecular Beam Epitaxy

被引：0

作者：

Zhou, X. Y. ^{[1
,2
,3
]}

Zhou, Y. ^{[4
]}

Wang, G. Y. ^{[1
,2
]}

Wang, Y. ^{[1
,2
]}

Chan, H. L. W. ^{[1
,2
]}

Choy, C. L. ^{[1
,2
]}

Cao, G. Z. ^{[3
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[2] Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China

[3] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[4] Shanghai Maritime Univ, Inst Marine mat Sci & Engn, Shanghai 200135, Peoples R China

来源：

MULTI-FUNCTIONAL MATERIALS AND STRUCTURES II, PTS 1 AND 2 | 2009年 / 79-82卷

关键词：

barium strontium titanate; thin film; Laser MBE; tunability;

D O I：

10.4028/www.scientific.net/AMR.79-82.823

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/mu m. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

引用

页码：823 / +

页数：2

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