Anisotropy and crystal orientation of silicon-application to the modeling of a bent mirror

被引:0
|
作者
Zhang, Lin [1 ]
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
来源
SRI 2009: THE 10TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION | 2010年 / 1234卷
关键词
silicon crystal orientation; anisotropy; Si(110); Si(311); elastic modulus; Poisson ratio; bent KB mirror;
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
Matrix formula and MATLAB algorithm are proposed to calculate the stiffness coefficient matrix C, the Young's modulus, shear modulus and Poisson ratio for the silicon crystal in any orientation. Results for Si(110) and Si(311) are given as an example. The anisotropic material properties of the silicon have been used in the mirror width profile optimization for the nano-imaging end-station ID22NI at the ESRF. As the Si(110) is used as the substrate of this multilayer coated KB mirror, the silicon crystal axis [0 0 1] is proposed to orient to the mirror axis. This is the case to have low stress in the mirror and low bending forces from actuators.
引用
收藏
页码:797 / 800
页数:4
相关论文
共 50 条
  • [41] REAL AND MOMENTUM SPACE FOCUSING OF NEUTRONS BY A CYLINDRICALLY BENT SILICON CRYSTAL
    MIKULA, P
    WAGNER, V
    LUKAS, P
    SCHERM, R
    PHYSICA B-CONDENSED MATTER, 1992, 180 : 981 - 983
  • [42] Volume reflection of 1-GeV protons by a bent silicon crystal
    Ivanov, Yu. M.
    Bondar, N. F.
    Gavrikov, Yu. A.
    Denisov, A. S.
    Zhelamkov, A. V.
    Ivochkin, V. G.
    Kos'yanenko, S. V.
    Lapina, L. P.
    Petrunin, A. A.
    Skorobogatov, V. V.
    Suvorov, V. M.
    Shchetkovsky, A. I.
    Taratin, A. M.
    Scandale, W.
    JETP LETTERS, 2006, 84 (07) : 372 - 376
  • [43] Seismic Anisotropy in salt structures due to preferred crystal orientation
    Raymer, D.G.
    Kendall, J.M.
    Revue de l'Institute Francais du Petrole, 53 (05): : 585 - 594
  • [44] Monochromatic Kirkpatrick-Baez microscope combining a spherically bent crystal and a multilayer mirror
    Shen, Jin
    An, Ning
    Zhang, Weiquan
    Cao, Zhurong
    Du, Xuewei
    Ding, Yongkun
    Wang, Qiuping
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 978
  • [45] Anisotropy effects on the reliability of single-crystal silicon
    Borrero-Lopez, Oscar
    Vodenitcharova, Tania
    Hoffman, Mark
    SCRIPTA MATERIALIA, 2010, 63 (10) : 997 - 1000
  • [46] Anisotropy of Single-Crystal Silicon in Nanometric Cutting
    Zhiguo Wang
    Jiaxuan Chen
    Guilian Wang
    Qingshun Bai
    Yingchun Liang
    Nanoscale Research Letters, 2017, 12
  • [47] Anisotropy of Single-Crystal Silicon in Nanometric Cutting
    Wang, Zhiguo
    Chen, Jiaxuan
    Wang, Guilian
    Bai, Qingshun
    Liang, Yingchun
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [48] Dependence of the probability of close collisions of high-energy charged particles in a bent crystal on the orientation of the crystal
    Kirillin, I. V.
    Shul'ga, N. F.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 402 : 40 - 43
  • [49] Design, modeling and verification of MEMS silicon torsion mirror
    Pan, F
    Kubby, J
    Peeters, E
    Chen, JK
    Vitomirov, O
    Taylor, D
    Mukherjee, S
    MICROELECTRONIC STRUCTURES AND MEMS FOR OPTICAL PROCESSING III, 1997, 3226 : 114 - 124