Anisotropy and crystal orientation of silicon-application to the modeling of a bent mirror

被引：0

作者：

Zhang, Lin ^{[1
]}

机构：

[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

SRI 2009: THE 10TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION | 2010年 / 1234卷

关键词：

silicon crystal orientation; anisotropy; Si(110); Si(311); elastic modulus; Poisson ratio; bent KB mirror;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Matrix formula and MATLAB algorithm are proposed to calculate the stiffness coefficient matrix C, the Young's modulus, shear modulus and Poisson ratio for the silicon crystal in any orientation. Results for Si(110) and Si(311) are given as an example. The anisotropic material properties of the silicon have been used in the mirror width profile optimization for the nano-imaging end-station ID22NI at the ESRF. As the Si(110) is used as the substrate of this multilayer coated KB mirror, the silicon crystal axis [0 0 1] is proposed to orient to the mirror axis. This is the case to have low stress in the mirror and low bending forces from actuators.

引用

页码：797 / 800

页数：4

共 50 条

[1] Modeling the Deflection of Protons and π- Mesons in a Bent Silicon Crystal
Koshcheev, V. P.
Morgun, D. A.
Shtanov, Yu. N.
TECHNICAL PHYSICS LETTERS, 2012, 38 (06) : 593 - 596
[2] Modeling the deflection of protons and π- mesons in a bent silicon crystal
V. P. Koshcheev
D. A. Morgun
Yu. N. Shtanov
Technical Physics Letters, 2012, 38 : 593 - 596
[3] Modeling the deflection of relativistic electrons in a bent silicon crystal
V. P. Koshcheev
Yu. N. Shtanov
D. A. Morgun
T. A. Panina
Technical Physics Letters, 2015, 41 : 946 - 949
[4] Modeling the deflection of relativistic electrons in a bent silicon crystal
Koshcheev, V. P.
Shtanov, Yu. N.
Morgun, D. A.
Panina, T. A.
TECHNICAL PHYSICS LETTERS, 2015, 41 (10) : 946 - 949
[5] CRYSTAL ORIENTATION SPACES AND REMARKS ON THE MODELING OF POLYCRYSTAL ANISOTROPY
DLUZEWSKI, PH
JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 1991, 39 (05) : 651 - 661
[6] Modeling deflection of 450-GeV protons in a bent silicon crystal
V. P. Koshcheev
N. V. Safin
D. A. Morgun
Technical Physics Letters, 2007, 33 : 658 - 660
[7] Modeling deflection of 450-GeV protons in a bent silicon crystal
Koshcheev, V. P.
Safin, N. V.
Morgun, D. A.
TECHNICAL PHYSICS LETTERS, 2007, 33 (08) : 658 - 660
[8] Anisotropy and the optimal aspect ratio of a bent crystal
Antimonov, Mikhail
Khounsary, Ali
17TH PAN-AMERICAN SYNCHROTRON RADIATION INSTRUMENTATION CONFERENCE SRI2013, 2014, 493
[9] ON THE ORIENTATION EFFECT IN THE POLYGONIZATION OF BENT SILICON CRYSTALS
VOGEL, FL
ACTA METALLURGICA, 1958, 6 (08): : 532 - 534
[10] Effects of boundary conditions and anisotropy on elastically bent silicon
S. K. Kaldor
I. C. Noyan
Experimental Mechanics, 2002, 42 (3) : 353 - 358

← 1 2 3 4 5 →