Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors

被引：15

作者：

Hong, B. H. ^{[1
,2
]}

Choi, L. ^{[1
,2
]}

Jung, Y. C. ^{[1
,2
]}

Hwang, S. W. ^{[1
,2
]}

Cho, K. H. ^{[3
]}

Yeo, K. H. ^{[3
]}

Kim, D. -W. ^{[3
]}

Jin, G. Y. ^{[3
]}

Park, D. ^{[3
]}

Song, S. H. ^{[4
]}

Lee, Y. Y. ^{[5
]}

Son, M. H. ^{[5
]}

Ahn, D. ^{[5
]}

机构：

[1] Korea Univ, Res Ctr Time Domain Nanofunct Devices, Seoul 136701, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Samsung Elect Co, Semicond R&D Ctr, Hwasung City 445701, South Korea

[4] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

[5] Univ Seoul, Seoul 130743, South Korea

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2010年 / 9卷 / 06期

关键词：

Gate all around (GAA); random telegraph noise (RTN); silicon nanowire FET (SNWFET); temperature dependence; MODEL;

D O I：

10.1109/TNANO.2010.2045006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (Ts) down to 4.2 K. From the T-dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the T-dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs.

引用

页码：754 / 758

页数：5

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