X-ray characterization of MgO thin films grown by laser ablation on yttria-stabilized zirconia

被引:23
|
作者
Stampe, PA [1 ]
Kennedy, RJ [1 ]
机构
[1] Florida A&M Univ, Tallahassee, FL 32307 USA
关键词
x-ray diffraction; laser ablation; growth; MgO; cubic zirconia;
D O I
10.1016/S0022-0248(98)00163-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Epitaxial MgO films have been grown on (1 0 0) oriented yttria-stabilized zirconia (YSZ) single crystal substrates by laser ablation. The optimum temperature and pressure are determined to be 500 degrees C and 5 x 10(-5) Torr of oxygen. X-ray diffraction measurements of the films indicate the growth of both (1 0 0) and (1 1 1) orientations. X-ray pole figures indicate that the MgO(1 0 0) films are single crystal, and that the MgO(1 1 1) films are twinned. The (1 0 0) oriented MgO grows cube on cube with the YSZ substrate, i.e. MgO[1 0 0]//YSZ[1 0 0]. For the (1 1 1) oriented MgO, the in-plane orientation is MgO[1 (1) over bar 0]//YSZ[0 1 0] and MgO[1 1 (2) over bar]//YSZ[0 0 (1) over bar]. Identical growth conditions can result in films of pure (1 0 0) growth pure (1 1 1) growth or any intermediate admixture. Variations in growth conditions do not lead to preferential growth of either orientation. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:472 / 477
页数:6
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