MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

被引：5

作者：

Maksimov, O. ^{[2
]}

Fisher, P. ^{[3
]}

Skowronski, M. ^{[3
]}

Salvador, P. A. ^{[3
]}

Snyder, M. ^{[4
]}

Xu, J. ^{[4
]}

Weng, X. ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Electroopt Ctr, Freeport, PA 16229 USA

[3] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[4] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 11期

关键词：

high resolution X-ray diffraction; reflection high energy electron diffraction; growth models; oxides; molecular beam epitaxy;

D O I：

10.1016/j.jcrysgro.2008.02.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 degrees C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 (2) over bar](MgO)parallel to(0 0 1)[1 0 0](YSZ) with four twin variants related by a 90 degrees in-plane rotation about the [1 1 1](MgO) axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2760 / 2766

页数：7

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