Actinic Review of EUV Masks

被引:15
|
作者
Feldmann, Heiko [1 ]
Ruoff, Johannes [1 ]
Harnisch, Wolfgang [2 ]
Kaiser, Winfried [1 ]
机构
[1] Carl Zeiss SMT AG, Rudolf Eber Str 2, D-73447 Oberkochen, Germany
[2] Carl Zeiss SMS GmbH, D-07745 Jena, Germany
来源
关键词
photomask metrology; scanner emulation; defect review; EUV optics; EUV mask infrastructure;
D O I
10.1117/12.848380
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Management of mask defects is a major challenge for the introduction of EUV for HVM production. Once a defect has been detected, its printing impact needs to be predicted. Potentially the defect requires some repair, the success of which needs to be proven. This defect review has to be done with an actinic inspection system that matches the imaging conditions of an EUV scanner. During recent years, several concepts for such an aerial image metrology system (AIMS T) have been proposed. However, until now no commercial solution exists for EUV. Today, advances in EUV optics technology allow envisioning a solution that has been discarded before as unrealistic. We present this concept and its technical cornerstones. While the power requirement for the EUV source is less demanding than for HVM lithography tools, radiance, floor space, and stability are the main criteria for source selection. The requirement to emulate several generations of EUV scanners demands a large flexibility for the ilumination and imaging systems. New critical specifications to the EUV mirrors in the projection microscope can be satisfied using our expertise from lithographic mirrors. In summary, an EUV AIMS T meeting production requirements seems to be feasible.
引用
收藏
页数:11
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