Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes

被引:8
|
作者
Ye, Tengling [1 ]
Chen, Zhenyu [1 ]
Chen, Jiangshan [1 ]
Ma, Dongge [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
基金
中国国家自然科学基金;
关键词
Charge-trapping; Energy transfer; Light-emitting diodes; CARRIER TRANSPORT; HOLE INJECTION; SINGLE-LAYER; TRANSIENT ELECTROLUMINESCENCE; TEMPERATURE-DEPENDENCE; POLYFLUORENE; EFFICIENCY; ELECTRON; EMISSION; CURRENTS;
D O I
10.1016/j.mseb.2010.07.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have measured the temperature dependence of the steady-state current-voltage (I-V) characteristics and the transient electroluminescent (EL) characteristics in 4-(dicyanomethylene)-2-t-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polyfluorene devices to study the charge-napping effect of DCJTB fluorescent dye on luminescence processes and on device performance Physical and chemical analyses prove that DCJTB molecules serve both as election and hole traps, and the charge-trapping effect is more sensitive against the electrons than the holes at the low dopant concentration This intrinsic characteristic causes the electron to be injected into the emitting layer first and then trapped in the bulk, producing a strong effect on device performance. (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码:75 / 80
页数:6
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