Fabrication of organic static induction transistors with higher order structures

被引：6

作者：

Mathew, JC ^{[1
]}

Hirashima, N ^{[1
]}

Nakamura, M ^{[1
]}

Iizuka, M ^{[1
]}

Kudo, K ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

organic transistors; static induction transistor; nanostructures; ultrasonic process; transistor characteristics;

D O I：

10.1016/j.apsusc.2004.09.161

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Organic static induction transistors (SITs) were fabricated with a Au(source)/organic/patterned-Au(gate)/organic/patternedAu(drain) structure employing a new concept, 'spontaneous patterning of higher order structures' (SPHOS). A selective mechanical exfoliation process was developed to replicate the pattern of gate electrode after a pre-patterned drain electrode. The I-V curve measured between the gate and the drain electrodes exhibited a good Schottky characteristic and the drain current of the SIT with higher order structure showed a clear modulation by the gate voltage. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：603 / 606

页数：4

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