Spectroscopic Ellipsometry of Porous Low-κ Dielectric Thin Films

被引：0

作者：

Kamineni, V. K. ^{[1
]}

Settens, C. M. ^{[1
]}

Grill, A. ^{[2
]}

Antonelli, G. A. ^{[3
]}

Matyi, R. J. ^{[1
]}

Diebold, A. C. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Novellus, Tualatin, OR 97062 USA

来源：

FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009 | 2009年 / 1173卷

关键词：

spectroscopic ellipsometry; porous; low-kappa dielectric; thin films; molecular bond vibrations; LOW-K FILMS; CHEMICAL-VAPOR-DEPOSITION; PORE-SIZE DISTRIBUTION; SICOH FILMS; POROSIMETRY; VINYLTRIMETHYLSILANE; CONSTANT; POROSITY;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Variable angle spectroscopic ellipsometry (VASE) measurements from 30 mu m (infrared) to 150 nm (vacuum ultraviolet) were used to measure the thickness, pore volume fraction, gradation in the refractive index and chemical bonding of porous low-kappa films. The VUV spectroscopic ellipsometry measurements were used to determine the pore volume fraction and gradation in the refractive index of the porous low-kappa films. Bruggeman's effective medium approximation was used to calculate the total pore volume fraction. The IR spectroscopic ellipsometry measurements were used to characterize the chemical bonding of the porous low-kappa samples. Absorption coefficients in the IR wavelength were used to characterize the chemical bonding in the porous low-kappa films.

引用

页码：168 / +

页数：2

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