X-ray and optical properties of chemically deposited nanocrystalline CdSe thin films

被引:18
|
作者
Hankare, P. P. [3 ]
Chate, P. A. [1 ]
Sathe, D. J. [2 ]
Jadhav, B. V. [3 ]
机构
[1] JSM Coll, Dept Chem, Alibag, MS, India
[2] KITS Coll Engn, Dept Chem, Kolhapur, Maharashtra, India
[3] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India
关键词
Chalcogenides; Thin films; Crystal growth; Electrical properties; ELECTRICAL-PROPERTIES; TEMPERATURE; GROWTH; ROUTE;
D O I
10.1016/j.jallcom.2010.04.237
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Dip method was used to obtain cadmium selenide (CdSe) thin films on glass substrates. The film thickness was found to be 0.8 mu m with a growing time of 5 h. The material obtained was characterized by optical absorption, scanning electron microscopy, X-ray diffraction and electrical measurements. Room temperature deposition results in films with the cubic structure and crystallite size of about 19.7 nm. From the optical absorption data, an energy gap equal to 1.82 eV was found. The material is interesting for applications in hybrid systems for solar energy conversions. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:220 / 223
页数:4
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