The effect of nonmagnetic-impurity doping on the curie temperature and magnetotransport properties of Ga1-xMnxAs

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作者：
Khabibullaev, PK
Yuldashev, SU
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来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2005年 / 50卷 / 09期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
摘要：
The effect of additional doping by nonmagnetic acceptor (Be) and donor (Te) impurities on the Curie temperature and anomalous Hall effect in Ga1-xMnxAs is studied. As the Be concentration increases, the Curie temperature grows for Ga1-xMnxAs with a comparatively low concentration of Mn (x = 0.03) and strongly decreases in the material with higher concentration of Mn x = 0.05. It is shown that the temperature dependence of the zero-magnetic-field resistivity (including the peak observed near the Curie temperature) can be adequately described by the magnetic- impurity scattering model. The additional doping with the donor (Te) impurity lowers the Curie temperature and enhances the anomalous Hall resistivity. As the Te concentration increases, the long-range ferromagnetic order in Ga1-xMnxAs (x = 0.085) disappears and the paramagnet-spin glass transition is observed instead.
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页码：1038 / 1043
页数：6
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