Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si:Bi

被引：9

作者：

Stavrias, N. ^{[1
]}

Saeedi, K. ^{[1
]}

Redlich, B. ^{[1
]}

Greenland, P. T. ^{[2
,3
]}

Riemann, H. ^{[4
]}

Abrosimov, N. V. ^{[4
]}

Thewalt, M. L. W. ^{[5
]}

Pidgeon, C. R. ^{[6
]}

Murdin, B. N. ^{[7
,8
]}

机构：

[1] Radboud Univ Nijmegen, Inst Mol & Mat, FELIX Lab, Toernooiveld 7c, NL-6525 ED Nijmegen, Netherlands

[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[3] UCL, Dept Phys & Astron, London WC1H 0AH, England

[4] Leibniz Inst Kristallzuchtung IKZ, D-12489 Berlin, Germany

[5] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[6] Heriot Watt Univ, SUPA, Inst Photon & Quantum Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[7] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[8] Univ Surrey, SEPNet, Guildford GU2 7XH, Surrey, England

来源：

PHYSICAL REVIEW B | 2017年 / 96卷 / 15期

基金：

英国工程与自然科学研究理事会; 加拿大自然科学与工程研究理事会;

关键词：

BISMUTH DONORS; RYDBERG STATES; SILICON; SPIN; SEMICONDUCTORS; READOUT; STORAGE; SI-28;

D O I：

10.1103/PhysRevB.96.155204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results for the lifetime of the orbital transitions of Bi donors in Si, measured using both frequency-domain and time-domain techniques, allowing us to distinguish between homogeneous and inhomogeneous processes. The proximity of the energy of the optically allowed transitions to the optical phonon energy means that there is an unusually wide variation in the lifetimes and broadening mechanisms for this impurity, from fully homogeneous lifetime-broadened transitions to fully inhomogeneously broadened lines. The relaxation lifetime (T-1) of the states ranges from the low 10's to 100's of ps, and we find that there is little extra dephasing (so that T-1 is of the order of T-2/2) in each case.

引用

页数：8

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