Electrical characteristics of InGaN/AlGaN and InGaN/GaN MQW near UV-LEDs

被引：0

作者：

Mu Sen ^{[1
]}

Yu Tong-Jun ^{[1
]}

Huang Liu-Bing ^{[1
]}

Jia Chuan-Yu ^{[1
]}

Pan Yao-Bo ^{[1
]}

Yang Zhi-Jian ^{[1
]}

Chen Zhi-Zhong ^{[1
]}

Qin Zhi-Xin ^{[1
]}

Zhang Guo-Yi ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Microscop, Beijing 100871, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 11期

关键词：

D O I：

10.1088/0256-307X/24/11/061

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical characteristics of In0.05Ga0.95N/Al0.07Ga0.93N and In0.05N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for In-GaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristics of p-n junction iether, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.

引用

页码：3245 / 3248

页数：4

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