On the origins of oxidation-induced stacking faults in silicon

被引：1

作者：

Monson, TK ^{[1
]}

Van Vechten, JA

机构：

[1] Colombia Amer Plating Co, Portland, OR 97210 USA

[2] Oregon State Univ, Dept Elect & Comp Engn, Adv Mat Res Ctr, Corvallis, OR 97331 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 02期

关键词：

D O I：

10.1149/1.1391673

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A qualitative explanation for the origins of oxidation-induced stacking faults, QSFs, is presented. This explanation is based on vacancy annihilation by dislocations during crystal growth, which influences the distribution and size of vacancy clusters within the finished boule. A mechanism for nucleation of OSFs at small clusters of vacancies is described. (C) 1999 The Electrochemical Society. S0013-4651(98)03-122-X. All rights reserved.

引用

页码：741 / 743

页数：3

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