Analysis of Static Imprint Phenomenon in Ferroelectric VDF-TrFE Copolymer Film for Nonvolatile Memory Devices

被引:5
|
作者
Kim, Woo Young [1 ]
Lee, Yong Soo [1 ]
Lee, Hee Chul [1 ]
Ka, Du Youn [2 ]
Kim, Sang Youl [2 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
关键词
Ferroelectric; Polymer; VDF-TrFE; Imprint; Reliability; Charge injection; VINYLIDENE FLUORIDE; POLARIZATION; POLYMERS;
D O I
10.3938/jkps.57.1690
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This work shows that the coercive voltage or coercive electric field, which is the voltage or electric field to make the net polarization zero in a ferroelectric capacitor, depends on the direction of the sweep voltage applied externally. The difference in the coercive fields is shown in a metal-ferroelectric polymer-metal as an imprint phenomenon after the polymer, poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), was prepared by using a spin coating method. This imprint can induce a read/write failure in ferroelectric memory devices; hence, it is important to study the imprint for reliability. The difference in the coercive voltages increases as the thickness of the capacitors increases while the difference in the coercive fields, the coercive voltage normalized for thickness remains nearly constant for all thicknesses. In conclusion, the imprint phenomenon is derived not from inside the ferroelectric polymer but from charge injection into the electrode.
引用
收藏
页码:1690 / 1694
页数:5
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