Room-temperature formation of magnesium-oxygen complex impurities in silicon

被引：5

作者：

Ho, LT ^{[1
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

来源：

PHYSICA B | 2001年 / 302卷

关键词：

complex impurity; magnesium; oxygen; silicon;

D O I：

10.1016/S0921-4526(01)00428-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnesium which is thermally diffused into silicon is well-known to behave like an interstitial donor. Recent study indicates that magnesium in silicon containing proper amount of oxygen can pair with oxygen to form magnesium-oxygen complex impurity, which is also an interstitial donor in silicon. Our study on this subject further shows that such magnesium-oxygen complex impurities can even be formed by interstitial magnesium and dispersed oxygen in silicon at quite low temperatures such as room-temperature. Experimentally observed results clearly demonstrating this newly found phenomenon are given. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：197 / 200

页数：4

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