Room-temperature formation of magnesium-oxygen complex impurities in silicon

被引:5
|
作者
Ho, LT [1 ]
机构
[1] Acad Sinica, Inst Phys, Taipei, Taiwan
来源
PHYSICA B | 2001年 / 302卷
关键词
complex impurity; magnesium; oxygen; silicon;
D O I
10.1016/S0921-4526(01)00428-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Magnesium which is thermally diffused into silicon is well-known to behave like an interstitial donor. Recent study indicates that magnesium in silicon containing proper amount of oxygen can pair with oxygen to form magnesium-oxygen complex impurity, which is also an interstitial donor in silicon. Our study on this subject further shows that such magnesium-oxygen complex impurities can even be formed by interstitial magnesium and dispersed oxygen in silicon at quite low temperatures such as room-temperature. Experimentally observed results clearly demonstrating this newly found phenomenon are given. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:197 / 200
页数:4
相关论文
共 50 条
  • [1] Magnesium-oxygen complex impurities in silicon
    Ho, LT
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1998, 210 (02): : 313 - 316
  • [2] Singly ionized magnesium-oxygen complex impurities in silicon
    Ho, LT
    10TH INTERNATIONAL CONFERENCE ON SHALLOW LEVEL CENTERS IN SEMICONDUCTORS (SLCS-10), PROCEEDINGS, 2003, : 721 - 725
  • [3] RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM-TEMPERATURE
    NEWMAN, RC
    TUCKER, JH
    LIVINGSTON, FM
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (05): : L151 - L156
  • [4] ROOM-TEMPERATURE CARBON AND OXYGEN DETERMINATION IN SINGLE-CRYSTAL SILICON
    VIDRINE, DW
    ANALYTICAL CHEMISTRY, 1980, 52 (01) : 92 - 96
  • [5] THE MECHANISM OF RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM-TEMPERATURE
    OATES, AS
    BINNS, MJ
    NEWMAN, RC
    TUCKER, JH
    WILKES, JG
    WILKINSON, A
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (32): : 5695 - 5705
  • [6] THE FORMATION OF A CONTINUOUS AMORPHOUS LAYER BY ROOM-TEMPERATURE IMPLANTATION OF BORON INTO SILICON
    JONES, KS
    SADANA, DK
    PRUSSIN, S
    WASHBURN, J
    WEBER, ER
    HAMILTON, WJ
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1414 - 1418
  • [7] SILICON DEFORMATION DAMAGE AT ROOM-TEMPERATURE
    YANG, K
    SCHWUTTKE, GH
    KAPPERT, H
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 448 - 448
  • [8] PLASMA ANODIZATION OF SILICON AT ROOM-TEMPERATURE
    DIMITRIOU, P
    GOURRIER, S
    REVUE DE PHYSIQUE APPLIQUEE, 1981, 16 (08): : 419 - 424
  • [9] THE SILICON GADOLINIUM INTERFACE AT ROOM-TEMPERATURE
    CARBONE, C
    NOGAMI, J
    LINDAU, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 972 - 973
  • [10] ROOM-TEMPERATURE SLIP IN SILICON FOILS
    PUTTICK, KE
    SHAHID, MA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01): : K5 - &