Silicon sensors implemented on p-type substrates for high radiation resistance application

被引：2
|
作者：
Artuso, Marina [1 ]
机构：
[1] Syracuse Univ, Syracuse, NY 13244 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 582卷 / 03期
基金：
美国国家科学基金会;
关键词：
silicon microstrip; silicon pixel; radiation hardness; charge collection efficiency;
D O I：
10.1016/j.nima.2007.07.106
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Processes based on p-type substrates are being studied for applications where extremely high radiation fluences are expected.. Recent results and prototype efforts are reviewed. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：835 / 838
页数：4
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