An 80 GHz Wide Tuning Range Push-Push VCO With gm-Boosted Full-Wave Rectification Technique in 90 nm CMOS

被引:27
|
作者
Chu, Shu-Wei [1 ]
Wang, Chorng-Kuang [1 ]
机构
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Coll Elect Engn & Comp Sci, Taipei 106, Taiwan
关键词
CMOS; frequency doubler; g(m)-boosted; millimeter-wave (mm-wave); push-push pair; rectifier; voltage-controlled oscillator (VCO);
D O I
10.1109/LMWC.2012.2189377
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, an 80 GHz push-push VCO with a g(m)-boosted full-wave rectification pair for W-band (75 to 110 GHz) applications is presented. Incorporating a g(m)-boosted push-push pair as a full-wave rectifier not only increases second-harmonic swing but also operates at low power consumption. Besides, the distributed LC-tank structure helps to further split the parasitic capacitances of buffers and then the push-push pair can extend the frequency tuning range effectively. The push-push VCO is implemented in 90 nm CMOS technology, and it achieves a tuning range of 3.4% and phase noise of -104.2 dBc/Hz at 10 MHz offset. The core area is 0.3 x 0.21 mm(2), and the power consumption is 2.66 mW from a 1.4 V supply voltage excluding buffers.
引用
收藏
页码:203 / 205
页数:3
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