Characterization of selective etching and patterning by sequential light- and heavy-ion irradiation of LiNbO3

被引:4
|
作者
Huang, Hsu-Cheng [1 ]
Malladi, Girish [2 ]
Zhang, Lihua [3 ]
Dadap, Jerry I. [1 ]
Kisslinger, Kim [3 ]
Bakhru, Hassaram [2 ]
Osgood, Richard M., Jr. [1 ]
机构
[1] Columbia Univ, Ctr Integrated Sci & Engn, New York, NY 10027 USA
[2] SUNY Albany, Polytech Inst, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
基金
美国国家科学基金会;
关键词
Lithium niobate (LiNbO3); Ion irradiation; Selective etching; Patterning; LITHIUM-NIOBATE; FABRICATION;
D O I
10.1016/j.optmat.2015.03.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The induced selective etching properties of LiNbO3 in a sample subjected to ion processing using sequential light- and heavy-ion irradiation are investigated and discussed. Through the use of TEM and SEM, the lattice structure at the amorphous-crystalline interface is examined after heavy ion exposure and it is found that single-energy amorphizing irradiation results in undercut etching at the interface, while multiple-energy irradiation yields sharper features. Such sequential-irradiation process based on both light-and heavy-ion irradiation enables ready fabrication of concomitant high-resolution patterning and exfoliation of structured freestanding thin films. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 5
页数:5
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