Transport properties of Bi2-xInxSe3 single crystals

被引：27
|
作者：
Navrátil, J
Plechácek, T
Horák, J
Karamazov, S
Lost'ák, P
Dyck, JS
Chen, W
Uher, C
机构：
[1] Acad Sci Czech Republ, Joint Lab Solid State Chem, Pardubice 53210, Czech Republic
[2] Univ Pardubice, Pardubice 53210, Czech Republic
[3] Univ Pardubice, Fac Chem Technol, Pardubice 53210, Czech Republic
[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2001年 / 160卷 / 02期
关键词：
transport properties; reflectance; narrow-gap semiconductors; tetradymite structure; Bi2Se3; indium incorporation; carrier scattering;
D O I：
10.1006/jssc.2001.9323
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi2-xInxSe3 (x = 0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi2Se3 crystal lattice on the individual components of thermal conductivity is evaluated and discussed. (C) 2001 Academic Press.
引用
收藏
页码：474 / 481
页数：8
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