Transport Properties of Bi2S3 Single Crystals

被引：0
|
作者：
Shaban, H. T. [1 ]
Nassary, M. M. [1 ]
El-Sadek, M. S. [1 ]
机构：
[1] S Valley Univ, Fac Sci, Dept Phys, Qena, Egypt
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2008年 / 24卷 / 05期
关键词：
Bi2S3; Hall effect; Thermoelectric power; Electrical conductivity;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi2S3 single crystals were grown by using a modification of Bridgman method. Measurements of the electrical conductivity, Hall effect and thermoelectric power (TEP) were preformed in two crystallographic directions (parallel and perpendicular to the c-axis). The measurements showed that the electrical conductivity, Hall mobility, and Seebeck coefficient have anisotropic nature. From these measurements some physical parameters were estimated and the crystals showed n-type of conduction mechanism. Also, values of the energy gap were found to be different in the two directions.
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页码：757 / 760
页数：4
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