Thermal conductivity of interconnected silicon nanoparticles: Application to porous silicon nanostructures

被引:23
|
作者
Chantrenne, P
Lysenko, V
机构
[1] Inst Natl Sci Appl, CNRS, UMR 5008, Thermal Ctr Lyon CETHIL, F-69621 Villeurbanne, France
[2] Inst Natl Sci Appl, CNRS, UMR 5511, LPN, F-69621 Villeurbanne, France
关键词
D O I
10.1103/PhysRevB.72.035318
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A model describing phonon heat conduction in silicon nanowires formed by interconnected nanoparticles is developed from basic principles of the elementary kinetic theory of gases. The thermal transport in a network of the interconnected nanoparticles forming a nanowire is found to be mainly controlled by the interconnection area. In particular, thermal conductivity of the network is strongly dependent on the ratio of the nanoparticle dimension to the interconnection one. Contrary to the case of classical silicon nanowires having a constant section dimension, the thermal conductivity of the interconnected nanoparticles with a given interconnection dimension decreases along with the nanoparticle dimension increase. The model is applied for thermal transport analysis in porous silicon (PS) nanostructures. In particular, it allows, for the first time, deducing of new structural information on PS nanoscale skeleton such as porosity dependent interconnection dimension and percolation strength of the nanoparticle network.
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates
    Rajabi, M.
    Dariani, R. S.
    Zad, A. Iraji
    BRAZILIAN JOURNAL OF PHYSICS, 2011, 41 (2-3) : 113 - 117
  • [22] Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates
    M. Rajabi
    R. S. Dariani
    A. Iraji zad
    Brazilian Journal of Physics, 2011, 41 : 113 - 117
  • [23] Application of scanning thermal microscopy for thermal conductivity measurements on meso-porous silicon thin films
    Gomes, S.
    David, L.
    Lysenko, V.
    Descamps, A.
    Nychyporuk, T.
    Raynaud, M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (21) : 6677 - 6683
  • [24] Frequency-dependent hopping conductivity between silicon nanocrystallites: Application to porous silicon
    Lampin, E
    Delerue, C
    Lannoo, M
    Allan, G
    PHYSICAL REVIEW B, 1998, 58 (18) : 12044 - 12048
  • [25] Evaluation of thermal conductivity of porous silicon layers by a photoacoustic method
    Benedetto, G
    Boarino, L
    Spagnolo, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 64 (02): : 155 - 159
  • [26] Thermal conductivity of partially amorphous porous silicon by photoacoustic technique
    Isaiev, Mykola
    Newby, Pascal J.
    Canut, Bruno
    Tytarenko, Alona
    Lishchuk, Pavlo
    Andrusenko, Dmytro
    Gomes, Severine
    Bluet, Jean-Marie
    Frechette, Luc G.
    Lysenko, Vladimir
    Burbelo, Roman
    MATERIALS LETTERS, 2014, 128 : 71 - 74
  • [27] Anisotropic thermal conductivity of silicon nitride ceramics containing carbon nanostructures
    Miranzo, Pilar
    Garcia, Eugenio
    Ramirez, Cristina
    Gonzalez-Julian, Jesus
    Belmonte, Manuel
    Isabel Osendi, M.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2012, 32 (08) : 1847 - 1854
  • [28] Temperature and structure size dependence of the thermal conductivity of porous silicon
    de Boor, J.
    Kim, D. S.
    Ao, X.
    Hagen, D.
    Cojocaru, A.
    Foell, H.
    Schmidt, V.
    EPL, 2011, 96 (01)
  • [29] Evaluation of thermal conductivity of porous silicon layers by a photoacoustic method
    G. Benedetto
    L. Boarino
    R. Spagnolo
    Applied Physics A, 1997, 64 : 155 - 159
  • [30] Nanoscale nature and low thermal conductivity of porous silicon layers
    Lysenko, V
    Gliba, V
    Strikha, V
    Dittmar, A
    Delhomme, G
    Roussel, P
    Barbier, D
    Jaffrezic-Renault, N
    Martelet, C
    APPLIED SURFACE SCIENCE, 1998, 123 : 458 - 461