1550 nm mode-locked semiconductor lasers for all-optical analog-to-digital conversion

被引：0

作者：

Kolodeznyi, Evgenii S. ^{[1
]}

Novikov, Innokenty I. ^{[1
,2
]}

Babichev, Andrey V. ^{[1
,2
]}

Kurochkin, Alexander S. ^{[1
]}

Gladyshev, Andrey G. ^{[1
,2
]}

Karachinsky, Leonid Ya. ^{[1
,2
]}

Gadzhiev, Idris M. ^{[1
,3
]}

Buyalo, Mikhail S. ^{[1
,3
]}

Usikova, Anna A. ^{[3
]}

Egorov, Anton Yu. ^{[1
]}

Bougrov, Vladislav E. ^{[1
]}

机构：

[1] ITMO Univ, Kronverkskii Pr 49, St Petersburg 197101, Russia

[2] Connector Opt LLC, Dontostroitelnaya 16, St Petersburg 194292, Russia

[3] Ioffe Inst, Polytekhn Skaya 26, St Petersburg 194021, Russia

来源：

PROCEEDINGS OF INTERNATIONAL CONFERENCE ON METAMATERIALS AND NANOPHOTONICS (METANANO-2017) | 2017年 / 1874卷

关键词：

HETEROSTRUCTURES; REGION;

D O I：

10.1063/1.4998092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated passive mode-locked laser diode based on strained InGaAlAs/InGaAs/InP heterostructure with emission wavelength 1550 urn. The laser have demonstrated following characteristics i.e. threshold current was 0.36 A, optical emission power was 12 mW, optical pulse repetition rate was 9.84 GHZ with similar to 8 ps pulse duration time at half-height.

引用

页数：4

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